Method And Apparatus For Semiconductor Testing At Low Temperature

ABSTRACT

A method for testing a plurality of semiconductor devices arranged on a strip may include forming an array of semiconductor devices on a frame, wherein contact pads of adjacent semiconductor devices are shorted, partially cutting the strip to electrically isolate individual semiconductor devices in the array, placing the strip on an adhesive tape configured to withstand low temperatures (e.g., below −20° C. or below −50° C.), arranging the strip and tape on a test chuck, exposing the test chuck, strip, and tape to temperatures below an ambient temperature and testing the plurality of semiconductor devices while exposed to a low temperature. In one embodiment a KAPTON™ film is used as the adhesive tape.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.61/784,499 filed on Mar. 14, 2013, which is incorporated herein in itsentirety.

TECHNICAL FIELD

The present disclosure relates to a method for semiconductor testing, inparticular for no-leads-packages isolation (Partial Cut) strip on filmframe testing at low temperature.

BACKGROUND

No leads-packages used for semiconductor devices are for examplequad-flat no-leads (QFN) or dual-flat no-leads (DFN) packages. Suchdevices comprise a semiconductor die within a molded housing thatcomprises no leads. The housing comprises contact pads that do notextend from the housing. In the manufacturing process, a plurality ofthese devices are placed on a respective QFN/DFN metal “lead frame” andmolded together to form a strip including a matrix of a plurality ofdevices as shown in FIG. 1.

During the conventional QFN/DFN assembly process, the semiconductordevices in the molded strip are shorted together and thus do not allowfor testing. Thus, to process this strip as shown in FIG. 1 to aso-called strip test form, the semiconductor devices need to be at leastpartially isolated prior to testing. This is usually accomplished by asaw blade, laser or water jet. FIG. 2 shows a close-up of severalsemiconductor devices arranged in a strip after partial isolation. Asshown, the devices are cut at a location that separates the contact padsof adjacent semiconductor devices. Some strip warping is often foundafter such a partial isolation process. However, the strip can still beused for testing in respective machines for ambient or high temperaturestrip testing.

Certain semiconductor devices, for example devices for the automotiveindustry, require testing at low temperatures. However, the isolation(partial cut) strip may experience significant warping when exposed tolow temperatures, for example at temperatures below −20° C. in anenvironment chamber due to the property of the metal lead frame (strip).Due to the warping caused by such low temperatures, testing cannot beproperly performed, for example, because the warping will cause a vacuummechanism in a conventional strip test handler to fail. FIGS. 3A and 3Bshow an example of a warped strip after exposure to low temperatures.For this reason, many semiconductor manufacturers limit the testing ofisolation strips to ambient testing and do not perform testing at lowertemperatures.

Another attempted solution for strip testing at low temperatures is toleave the semiconductor devices on a film frame after full separation(singulation) of the devices, and perform low temperature testing on thesingulated devices. However, tape distortion during the singulationprocess affects the alignment and/or spacing between devices, leading toproblems during subsequent picking of the devices from the frame, andlimiting the number of parallelism testing.

Thus, there is a need for an improved manufacturing and/or assemblyprocedure to allow low temperature testing of semiconductor devices inno-lead packages, e.g., semiconductor devices arranged in an isolation(partially cut) strip.

SUMMARY

One embodiment provides a method for testing a plurality ofsemiconductor devices arranged on a strip may include forming an arrayof semiconductor devices on a frame, wherein contact pads of adjacentsemiconductor devices are shorted, partially cutting the strip toelectrically isolate individual semiconductor devices in the array,placing the strip on an adhesive tape configured for use at temperaturesextending below −20° C., arranging the strip and tape on a test chuck,exposing the test chuck, strip, and tape to temperatures below anambient temperature and testing the plurality of semiconductor deviceswhile exposed to a low temperature.

The adhesive tape may an adhesion of more than 1,200 gf/in before a UVcure and/or an adhesion of less than 10 gf/in after a UV cure. Theadhesive tape is configured to withstand up to −50° C. without changingany thermal property of the semiconductor devices arranged on the tape.For example, a KAPTON™ film may be used as the adhesive tape.

Another embodiment provides an apparatus for testing semiconductordevices at low temperature, comprising a test chuck, an adhesive tapearranged on the test chuck, and an isolated test strip arranged on theadhesive tape, the isolated test strip comprising an array ofsemiconductor devices on a frame and being partially cut to electricallyisolate adjacent semiconductor devices in the array. The adhesive tapeis configured for use at temperatures extending below −20° C., or belowto −50° C. For example, a KAPTON™ film may be used as the adhesive tape.In addition, a metal frame may be arranged over the tape and surroundingthe strip.

BRIEF DESCRIPTION OF THE FIGURES

Example embodiments are discussed below with reference to the drawings,in which:

FIG. 1 illustrates an example strip including a plurality ofsemiconductor devices arranged in an array on a metal lead frame;

FIG. 2 shows a close-up view of a portion of the strip of FIG. 1, withadjacent semiconductor devices being partially isolated by a cut lineformed by a saw blade, laser or water jet, to form an isolation strip;

FIGS. 3A and 3B show the isolation strip of FIG. 2 arranged on a testchuck, with the isolation strip being warped by exposed to lowtemperature;

FIGS. 4A and 4B illustrate an example apparatus for low temperaturetesting of a partially cut test strip, including an adhesive tape forsecuring the partially cut test strip to a test strip during lowtemperature testing, according to an example embodiment; and

FIG. 5 illustrates an example method 200 of a low temperature testingprocess using an example apparatus as shown in FIGS. 4A and 4B.

DETAILED DESCRIPTION

As discussed above, the present disclosure provides embodiments for lowtemperature testing of an isolated (partially cut) semiconductor devicetest strip, which may avoid or reduce problems associated withconvention techniques, such as the problem of lead frame warping duringlow temperature exposure.

According to various embodiments, to eliminate warping of thesemiconductor device strip at low temperature, the semiconductor devicetest strip is secured to a test chuck using a special adhesive tape, anda frame is applied. In some embodiments, the strip is only partially cutto maintain the devices at their intended position and chip-to-chipspacing, suitable for performing proper testing. A frame is then placedover the strip-adhesive tape assembly. This measure has been proven tobe effective and reliable over time without changing any productcharacteristic of the IC testing strip.

FIGS. 4A and 4B illustrate an example apparatus 100 for low temperaturetesting of a partially cut test strip, according to an exampleembodiment. FIG. 4A shows an exploded view of apparatus 100, while FIG.4B shows a partial assembled view of apparatus 100. As shown, apparatus100 includes a test strip 102 including a two-dimensional array ofsemiconductor devices (e.g., chips) 104 on a lead frame 105, a testchuck 110 for supporting test strip 102, an adhesive tape (or film) 120,and an optional metal frame 124. The adhesive tape 120 is applied to atop surface of test chuck 110, and the test strip 102 is then mountedonto the adhesive tape 120. The optional metal frame 124 may also bemounted onto the adhesive tape 120 in an manner that surrounds teststrip 102.

Test strip 102 may be partially cut, e.g., using a saw blade, laser orwater jet, to isolate the individual semiconductor devices 104 from eachother, as indicated by cut lines 106 between adjacent semiconductordevices 104. This isolation is provided to avoid shorting between thesemiconductor devices 104 during testing.

The adhesive tape or film 130 may configured to withstand lowtemperatures, e.g., extending below −20° C. or even below −50° C., whilemaintaining sufficient adhesion and without changing any thermalproperty of the overlying semiconductor devices 104. In someembodiments, adhesive tape 130 provides more than 1,200 gf/in adhesionbetween the test chuck 110 and test strip frame 105 (e.g., SUS304stainless steel) at both ambient temperatures and low temperatures,e.g., below −20° C. or below −50° C. This adhesion may reduce oreliminate the possibility of the isolation (partially cut) test strip102 from deforming, e.g., warping, under all testing temperatures. Insome embodiments, the adhesive tape 130 also provides less than 10 gf/inadhesion between the adhesive tape 130 and test strip frame 105 afterbeing UV cured, which substantially reduces or eliminates residueremaining on the test strip lead frame 105 after the tape demountingprocess. In some embodiments, the adhesive tape 130 is a KAPTON™ film.

FIG. 5 illustrates an example method 200 of a low temperature testingprocess using an example apparatus 100 as shown in FIGS. 4A and 4B. Atstep 202, a DFN/QFN lead frame strip with molded encapsulation isformed. A strip saw mount is performed at step 204. Then, at step 206, apartial cut is performed on the test strip to form the isolation teststrip 102 shown in FIGS. 4A and 4B. At step 208, the isolation teststrip 102 is then mounted to a test chuck 110 using adhesive tape 130,as shown in FIGS. 4A and 4B. At step 210, the mounted test strip 102 istested at ambient, hot, and cold (e.g., below −20° C. or below −50° C.)temperatures. A UV erase is then performed at step 212. A tape de-mountand strip marking may then be performed at step 214. At step 216, thetest strip may be saw mounted and singulated. Finally, at step 218, thesingulated devices (e.g., chips) may be inspected and placed into a tubeor reel.

The arranged of FIGS. 4A and 4B and process of FIG. 5 may allow for anincreasing DFN/QFN parallelism at low temperature film frame testing.Furthermore, the package size limitation on wide range temperaturetesting may be eliminated. Finally, conversion time or change over toolcosts may be reduce or eliminated.

Although the disclosed embodiments are described in detail in thepresent disclosure, it should be understood that various changes,substitutions and alterations can be made to the embodiments withoutdeparting from their spirit and scope.

1. A method for testing a plurality of semiconductor devices arranged ona strip, comprising: forming an array of semiconductor devices on aframe, wherein contact pads of adjacent semiconductor devices areshorted; partially cutting the strip to electrically isolate individualsemiconductor devices in the array; placing the strip on an adhesivetape configured to resist warping of the isolated test strip away fromthe test chuck at temperatures extending below −20° C.; arranging thestrip and tape on a test chuck; exposing the test chuck, strip, and tapeto temperatures below an ambient temperature; and testing the pluralityof semiconductor devices while exposed to a low temperature.
 2. Themethod according to claim 1, further comprising placing a metal frame onthe tape surrounding the strip.
 3. The method according to claim 1,wherein the strip is partially sawed such that side rails remain on thestrip.
 4. The method according to claim 1, wherein the adhesive tape hasan adhesion of more than 1,200 gf/in before a UV cure.
 5. The methodaccording to claim 1, wherein the adhesive tape has an adhesion of lessthan 10 gf/in after a UV cure.
 6. The method according to claim 1,wherein the adhesive tape is configured to withstand up to −50° C.without changing any thermal property of the semiconductor devicesarranged on the tape.
 7. The method according to claim 1, wherein theadhesive tape is a an adhesive film synthesized by polymerizing anaromatic dianhydride and an aromatic diamine. 8-14 (canceled)
 15. Amethod for testing semiconductor devices at low temperature, comprising:providing a test chuck; arranging an adhesive tape on the test chuck;and arranging an isolated test strip on the adhesive tape, the isolatedtest strip comprising an array of semiconductor devices on a frame andbeing partially cut to electrically isolate adjacent semiconductordevices in the array; wherein the adhesive tape is configured to resistwarping of the isolated test strip away from the test chuck attemperatures extending below −20° C.
 16. The method according to claim15, further comprising the step of arranging a metal frame over the tapeand surrounding the strip.
 17. The method according to claim 15, whereinthe strip is partially sawed such that side rails remain on the strip.18. The method according to claim 15, wherein the adhesive tape has anadhesion of more than 1,200 gf/in before a UV cure.
 19. The methodaccording to claim 15, wherein the adhesive tape has an adhesion of lessthan 10 gf/in after a UV cure.
 20. The method according to claim 15,wherein the adhesive tape is configured to withstand up to −50° C.without changing any thermal property of the semiconductor devicesarranged on the tape.
 21. The method according to claim 15, wherein theadhesive tape is an adhesive film synthesized by polymerizing anaromatic dianhydride and an aromatic diamine.
 22. A method for testingsemiconductor devices at low temperature, comprising: providing a testchuck; arranging an adhesive tape on the test chuck; and arranging anisolated test strip on the adhesive tape, the isolated test stripcomprising an array of semiconductor devices on a frame and beingpartially cut to electrically isolate adjacent semiconductor devices inthe array; wherein the adhesive tape is configured to resist warping ofthe isolated test strip away from the test chuck at temperaturesextending below −20° C., wherein the adhesive tape has an adhesion ofmore than 1,200 gf/in before a UV cure, and wherein the adhesive tapehas an adhesion of less than 10 gf/in after a UV cure.
 23. A methodaccording to claim 22, wherein the adhesive tape is an adhesive filmsynthesized by polymerizing an aromatic dianhydride and an aromaticdiamine.